Manufacture method of amoled pixel drive circuit

ABSTRACT

The present invention provides a manufacture method of an AMOLED pixel driving circuit. The method utilizes the oxide semiconductor thin film transistor to be the switch thin film transistor of the AMOLED pixel driving circuit to reduce the leakage current of the switch thin film transistor, and the P type polysilicon thin film transistor manufactured by utilizing the Solid Phase Crystallization is employed to be the drive thin film transistor of the AMOLED pixel driving circuit to promote the mobility, the equality and the reliability of the drive thin film transistor, and utilizing the P type thin film transistor to be the drive thin film transistor can form the constant current type OLED element, which is more stable than the source follower type OLED formed by the N type thin film transistor, and meanwhile, the parasitic capacitance is decreased with the top gate structure.

FIELD OF THE INVENTION

The present invention relates to a display technology field, and moreparticularly to a manufacture method of an AMOLED pixel drive circuit.

BACKGROUND OF THE INVENTION

The Organic Light Emitting Diodes (OLED) display device possesses manyoutstanding properties of self-illumination, low driving voltage, highluminescence efficiency, short response time, high clarity and contrast,near 180° view angle, wide range of working temperature, applicabilityof flexible display and large scale full color display. The OLED isconsidered as the most potential display device.

The OLED can be categorized into two major types according to thedriving methods, which are the Passive Matrix OLED (PMOLED) and theActive Matrix OLED (AMOLED), i.e. two types of the direct addressing andthe Thin Film Transistor (TFT) matrix addressing. The AMOLED comprisespixels arranged in array and belongs to active display type, which hashigh lighting efficiency and is generally utilized for the large scaledisplay devices of high resolution.

The AMOLED is a current driving element. When the electrical currentflows through the organic light emitting diode, the organic lightemitting diode emits light, and the brightness is determined accordingto the current flowing through the organic light emitting diode itself.Most of the present Integrated Circuits (IC) only transmit voltagesignals. Therefore, the AMOLED pixel driving circuit needs to accomplishthe task of converting the voltage signals into the current signals. Thetraditional AMOLED pixel driving circuit generally is 2T1C, which is astructure comprising two thin film transistors and one capacitor toconvert the voltage into the current. The two thin film transistorsrespectively are the drive thin film transistor and the switch thin filmtransistor.

For the 2T1C AMOLED pixel driving circuit, the drive thin filmtransistor and the switch thin film transistor are usually the sametype, and both are oxide thin film transistors or both are Poly Siliconthin film transistors. Although the mobility of the Low Temperature PolySilicon (LTPS) thin film transistor based on the Excimer Laser Annealing(ELA) technology is high but the equality is poor, and the leakagecurrent is higher. On the contrary, the equality of the oxidesemiconductor thin film transistor is better, and the leakage current islow but the mobility is lower and the reliability is bad. Therefore, nomatter the oxide semiconductor thin film transistor or the Poly Siliconthin film transistor is utilized, there are defects existing in thepresent 2T1C AMOLED pixel driving circuit.

SUMMARY OF THE INVENTION

An objective of the present invention is to provide an AMOLED pixeldriving circuit, which can reduce the leakage current of the switch thinfilm transistor and can enhance the mobility and the reliability of thedrive thin film transistor to decrease the parasitic capacitance.

For realizing the aforesaid objective, the present invention provides amanufacture method of an AMOLED pixel driving circuit, comprising stepsof:

step 1, providing a substrate, and performing clean and pre-cure to thesubstrate;

step 2, depositing a buffer layer on the substrate, and depositing anamorphous silicon layer on the buffer layer;

step 3, performing P type ion doping and rapid thermal annealing to theamorphous silicon layer to crystallize the same into a polysiliconlayer, and patterning the polysilicon layer to form a drive thin filmtransistor active layer and a storage capacitor lower electrode;

step 4, depositing a gate insulation layer on the drive thin filmtransistor active layer, the storage capacitor lower electrode and thebuffer layer;

step 5, depositing a first metal layer on the gate insulation layer, andpatterning the first metal layer to form a drive thin film transistorgate above the drive thin film transistor active layer and a switch thinfilm transistor gate, which is separately aligned with the drive thinfilm transistor gate, and a storage capacitor upper electrode locatedabove the storage capacitor lower electrode;

step 6, depositing an interlayer insulation layer on the drive thin filmtransistor gate, the switch thin film transistor gate, the storagecapacitor upper electrode and the gate insulation layer;

step 7, depositing an oxide semiconductor layer on the interlayerinsulation layer, and patterning the oxide semiconductor layer to form aswitch thin film transistor active layer above the switch thin filmtransistor gate;

step 8, patterning the interlayer insulation layer and the gateinsulation layer to form a first via and a second via penetrating theinterlayer insulation layer and the gate insulation layer torespectively expose two ends of the drive thin film transistor activelayer with the first via and the second via;

step 9, depositing a second metal layer on the interlayer insulationlayer and the switch thin film transistor active layer, and patterningthe second metal layer to form a drive thin film transistor source, adrive thin film transistor drain, a switch thin film transistor sourceand a switch thin film transistor drain;

wherein the drive thin film transistor source and the drive thin filmtransistor drain respectively contact with two ends of the drive thinfilm transistor active layer through the first via and the second via;

the switch thin film transistor source and the switch thin filmtransistor drain respectively contact with two ends of the switch thinfilm transistor active layer;

the switch thin film transistor gate and the drive thin film transistorsource are electrically coupled.

The substrate in the step 1 is a glass substrate.

All materials of the buffer layer, the gate insulation layer and theinterlayer insulation layer are one or more combinations of siliconoxide and silicon nitride.

Both materials of the first metal layer and the second metal layer aremolybdenum, aluminum or copper.

The P type ion doped in the step 3 is boron ion.

Material of the oxide semiconductor in the step 7 is IGZO or ITZO.

The manufacture method further comprises: step 10, sequentially forminga flat layer, a pixel electrode, a pixel definition layer and a pixelseparation layer from top to bottom on the drive thin film transistorsource, the drive thin film transistor drain, the switch thin filmtransistor source, the switch thin film transistor drain and theinterlayer insulation layer.

A third via penetrating the flat layer is formed in a position on theflat layer corresponding to the drive thin film transistor drain; thepixel electrode contacts with the drive thin film transistor drainthrough the third via.

The pixel definition layer is formed with an opening at a positioncorresponding to the pixel electrode.

Material of the pixel electrode is ITO.

The present invention further provides a manufacture method of an AMOLEDpixel driving circuit, comprising steps of:

step 1, providing a substrate, and performing clean and pre-cure to thesubstrate;

step 2, depositing a buffer layer on the substrate, and depositing anamorphous silicon layer on the buffer layer;

step 3, performing P type ion doping and rapid thermal annealing to theamorphous silicon layer to crystallize the same into a polysiliconlayer, and patterning the polysilicon layer to form a drive thin filmtransistor active layer and a storage capacitor lower electrode;

step 4, depositing a gate insulation layer on the drive thin filmtransistor active layer, the storage capacitor lower electrode and thebuffer layer;

step 5, depositing a first metal layer on the gate insulation layer, andpatterning the first metal layer to form a drive thin film transistorgate above the drive thin film transistor active layer and a switch thinfilm transistor gate, which is separately aligned with the drive thinfilm transistor gate, and a storage capacitor upper electrode locatedabove the storage capacitor lower electrode;

step 6, depositing an interlayer insulation layer on the drive thin filmtransistor gate, the switch thin film transistor gate, the storagecapacitor upper electrode and the gate insulation layer;

step 7, depositing an oxide semiconductor layer on the interlayerinsulation layer, and patterning the oxide semiconductor layer to form aswitch thin film transistor active layer above the switch thin filmtransistor gate;

step 8, patterning the interlayer insulation layer and the gateinsulation layer to form a first via and a second via penetrating theinterlayer insulation layer and the gate insulation layer torespectively expose two ends of the drive thin film transistor activelayer with the first via and the second via;

step 9, depositing a second metal layer on the interlayer insulationlayer and the switch thin film transistor active layer, and patterningthe second metal layer to form a drive thin film transistor source, adrive thin film transistor drain, a switch thin film transistor sourceand a switch thin film transistor drain;

wherein the drive thin film transistor source and the drive thin filmtransistor drain respectively contact with two ends of the drive thinfilm transistor active layer through the first via and the second via;

the switch thin film transistor source and the switch thin filmtransistor drain respectively contact with two ends of the switch thinfilm transistor active layer;

the switch thin film transistor gate and the drive thin film transistorsource are electrically coupled;

wherein the substrate in the step 1 is a glass substrate;

wherein all materials of the buffer layer, the gate insulation layer andthe interlayer insulation layer are one or more combinations of siliconoxide and silicon nitride;

wherein both materials of the first metal layer and the second metallayer are molybdenum, aluminum or copper.

The benefits of the present invention are: in the manufacture method ofthe AMOLED pixel driving circuit according to the present invention, theoxide semiconductor thin film transistor is utilized to be the switchthin film transistor of the AMOLED pixel driving circuit to reduce theleakage current of the switch thin film transistor, and the P typepolysilicon thin film transistor manufactured by utilizing the SolidPhase Crystallization is employed to be the drive thin film transistorof the AMOLED pixel driving circuit to promote the mobility, theequality and the reliability of the drive thin film transistor, andutilizing the P type thin film transistor to be the drive thin filmtransistor can form the constant current type OLED element, which ismore stable than the source follower type OLED formed by the N type thinfilm transistor, and meanwhile, the parasitic capacitance is decreasedwith the top gate structure.

BRIEF DESCRIPTION OF THE DRAWINGS

In order to better understand the characteristics and technical aspectof the invention, please refer to the following detailed description ofthe present invention is concerned with the diagrams, however, providereference to the accompanying drawings and description only and is notintended to be limiting of the invention.

In drawings,

FIG. 1 is a diagram of the step 1 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 2 is a diagram of the step 2 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 3 is a diagram of the step 3 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 4 is a diagram of the step 4 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 5 is a diagram of the step 5 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 6 is a diagram of the step 6 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 7 is a diagram of the step 7 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 8 is a diagram of the step 8 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 9 is a diagram of the step 9 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 10 is a diagram of the step 10 in the manufacture method of theAMOLED pixel driving circuit according to the present invention;

FIG. 11 is a flowchart of the manufacture method of the AMOLED pixeldriving circuit according to the present invention.

DETAILED DESCRIPTION OF PREFERRED EMBODIMENTS

For better explaining the technical solution and the effect of thepresent invention, the present invention will be further described indetail with the accompanying drawings and the specific embodiments.

Please refer to FIG. 11. The present invention provides a manufacturemethod of an AMOLED pixel driving circuit, comprising steps of:

step 1, referring to FIG. 1, providing a substrate 1, and performingclean and pre-cure to the substrate 1.

Specifically, the substrate 1 is a transparent substrate and preferablyto be a glass substrate.

step 2, referring to FIG. 2, depositing a buffer layer 2 on thesubstrate 1, and depositing an amorphous silicon layer 3′ on the bufferlayer 2.

Specifically, material of the buffer layer 2 is one or more combinationsof silicon oxide (SiOx) and silicon nitride (SiNx).

step 3, referring to FIG. 3, performing P type ion doping and rapidthermal annealing (RTA) to the amorphous silicon layer 3′ to crystallizethe same into a polysilicon layer, and patterning the polysilicon layerto form a drive thin film transistor active layer 31 and a storagecapacitor lower electrode 32.

Specifically, the P type ion doped in the step 3 is boron (B) ion. Thedrive thin film transistor formed in the following is a P type thin filmtransistor with doping the P type ions. The P type thin film transistorcan manufacture the constant current type OLED element, which is morestable than the source follower type OLED formed by the N type thin filmtransistor.

Furthermore, utilizing the polysilicon to be the drive thin filmtransistor active layer can promote the equality, reliability andmobility of the drive thin film transistor.

step 4, referring to FIG. 4, depositing a gate insulation layer 4 on thedrive thin film transistor active layer 31, the storage capacitor lowerelectrode 32 and the buffer layer 2.

Specifically, material of the gate isolation layer 4 is one or morecombinations of silicon oxide and silicon nitride.

step 5, referring to FIG. 5, depositing a first metal layer on the gateinsulation layer 4, and patterning the first metal layer to form a drivethin film transistor gate 41 above the drive thin film transistor activelayer 31 and a switch thin film transistor gate 42, which is separatelyaligned with the drive thin film transistor gate 41, and a storagecapacitor upper electrode 43 located above the storage capacitor lowerelectrode 32.

Preferably, material of the first metal layer is molybdenum (Mo),aluminum (Al) or copper (Gu). The drive thin film transistor gate 41 isabove the drive thin film transistor active layer 31 and thus to form atop gate type thin film transistor. The top gate type thin filmtransistor can significantly decrease the parasitic capacitance of thedrive thin film transistor.

The storage capacitor lower electrode 32 and the storage capacitor upperelectrode 43 commonly construct the storage capacitor of the AMOLEDpixel driving circuit.

step 6, referring to FIG. 6, depositing an interlayer insulation layer 5on the drive thin film transistor gate 41, the switch thin filmtransistor gate 42, the storage capacitor upper electrode 43 and thegate insulation layer 4.

Specifically, material of the interlayer insulation layer 5 is one ormore combinations of silicon oxide and silicon nitride.

step 7, referring to FIG. 7, depositing an oxide semiconductor layer onthe interlayer insulation layer 5, and patterning the oxidesemiconductor layer to form a switch thin film transistor active layer61 above the switch thin film transistor gate 42.

Preferably, material of the oxide semiconductor layer is Indium GalliumZinc Oxide (IGZO) or Indium Titanium Zinc Oxide (ITZO).

Furthermore, utilizing the oxide semiconductor to be the switch thinfilm transistor active layer 61 can reduce the leakage current of theswitch thin film transistor.

step 8, referring to FIG. 8, patterning the interlayer insulation layer5 and the gate insulation layer 4 to form a first via 51 and a secondvia 52 penetrating the interlayer insulation layer 5 and the gateinsulation layer 4 to respectively expose two ends of the drive thinfilm transistor active layer 31 with the first via 51 and the second via52.

step 9, referring to FIG. 9, depositing a second metal layer on theinterlayer insulation layer 5 and the switch thin film transistor activelayer 61, and patterning the second metal layer to form a drive thinfilm transistor source 73, a drive thin film transistor drain 74, aswitch thin film transistor source 71 and a switch thin film transistordrain 72.

Specifically, the drive thin film transistor source 73 and the drivethin film transistor drain 74 respectively contact with two ends of thedrive thin film transistor active layer 31 through the first via 51 andthe second via 52.

The drive thin film transistor source 73, the drive thin film transistordrain 74, the drive thin film transistor gate 41 and the switch thinfilm transistor gate 42 commonly construct the drive thin filmtransistor of the AMOLED pixel driving circuit.

The switch thin film transistor source 71 and the switch thin filmtransistor drain 72 respectively contact with two ends of the switchthin film transistor active layer 61.

The switch thin film transistor source 71, the switch thin filmtransistor drain 72, the switch thin film transistor gate 42 and theswitch thin film transistor active layer 61 commonly construct theswitch thin film transistor of the AMOLED pixel driving circuit.

The switch thin film transistor gate 72 and the drive thin filmtransistor source 73 are electrically coupled. The switch thin filmtransistor, the drive thin film transistor and the storage capacitorcommonly construct a 2T1C type AMOLED pixel driving circuit.

step 10, referring to FIG. 10, sequentially forming a flat layer 8, apixel electrode 9, a pixel definition layer 10 and a pixel separationlayer 11 from top to bottom on the drive thin film transistor source 73,the drive thin film transistor drain 74, the switch thin film transistorsource 71, the switch thin film transistor drain 72 and the interlayerinsulation layer 5.

Specifically, a third via 81 penetrating the flat layer 8 is formed in aposition on the flat layer 8 corresponding to the drive thin filmtransistor drain 72, and the pixel electrode 9 contacts with the drivethin film transistor drain 74 through the third via 81. The pixeldefinition layer 10 is formed with an opening 101 at a positioncorresponding to the pixel electrode 9. The opening 101 is employed todeposit an organic function layer of the OLED element to form an organiclight emitting diode.

Preferably, material of the flat layer 8 is one or more combinations ofsilicon oxide and silicon nitride.

Preferably, material of the pixel electrode 9 is Indium Tin Oxide (ITO).

In conclusion, in the manufacture method of the AMOLED pixel drivingcircuit according to the present invention, the oxide semiconductor thinfilm transistor is utilized to be the switch thin film transistor of theAMOLED pixel driving circuit to reduce the leakage current of the switchthin film transistor, and the P type polysilicon thin film transistormanufactured by utilizing the Solid Phase Crystallization is employed tobe the drive thin film transistor of the AMOLED pixel driving circuit topromote the mobility, the equality and the reliability of the drive thinfilm transistor, and utilizing the P type thin film transistor to be thedrive thin film transistor can form the constant current type OLEDelement, which is more stable than the source follower type OLED formedby the N type thin film transistor, and meanwhile, the parasiticcapacitance is decreased with the top gate structure.

Above are only specific embodiments of the present invention, the scopeof the present invention is not limited to this, and to any persons whoare skilled in the art, change or replacement which is easily derivedshould be covered by the protected scope of the invention. Thus, theprotected scope of the invention should go by the subject claims.

What is claimed is:
 1. A manufacture method of an AMOLED pixel drivingcircuit, comprising steps of: step 1, providing a substrate, andperforming clean and pre-cure to the substrate; step 2, depositing abuffer layer on the substrate, and depositing an amorphous silicon layeron the buffer layer; step 3, performing P type ion doping and rapidthermal annealing to the amorphous silicon layer to crystallize the sameinto a polysilicon layer, and patterning the polysilicon layer to form adrive thin film transistor active layer and a storage capacitor lowerelectrode; step 4, depositing a gate insulation layer on the drive thinfilm transistor active layer, the storage capacitor lower electrode andthe buffer layer; step 5, depositing a first metal layer on the gateinsulation layer, and patterning the first metal layer to form a drivethin film transistor gate above the drive thin film transistor activelayer and a switch thin film transistor gate, which is separatelyaligned with the drive thin film transistor gate, and a storagecapacitor upper electrode located above the storage capacitor lowerelectrode; step 6, depositing an interlayer insulation layer on thedrive thin film transistor gate, the switch thin film transistor gate,the storage capacitor upper electrode and the gate insulation layer;step 7, depositing an oxide semiconductor layer on the interlayerinsulation layer, and patterning the oxide semiconductor layer to form aswitch thin film transistor active layer above the switch thin filmtransistor gate; step 8, patterning the interlayer insulation layer andthe gate insulation layer to form a first via and a second viapenetrating the interlayer insulation layer and the gate insulationlayer to respectively expose two ends of the drive thin film transistoractive layer with the first via and the second via; step 9, depositing asecond metal layer on the interlayer insulation layer and the switchthin film transistor active layer, and patterning the second metal layerto form a drive thin film transistor source, a drive thin filmtransistor drain, a switch thin film transistor source and a switch thinfilm transistor drain; wherein the drive thin film transistor source andthe drive thin film transistor drain respectively contact with two endsof the drive thin film transistor active layer through the first via andthe second via; the switch thin film transistor source and the switchthin film transistor drain respectively contact with two ends of theswitch thin film transistor active layer; the switch thin filmtransistor gate and the drive thin film transistor source areelectrically coupled.
 2. The manufacture method of the AMOLED pixeldriving circuit according to claim 1, wherein the substrate in the step1 is a glass substrate.
 3. The manufacture method of the AMOLED pixeldriving circuit according to claim 1, wherein all materials of thebuffer layer, the gate insulation layer and the interlayer insulationlayer are one or more combinations of silicon oxide and silicon nitride.4. The manufacture method of the AMOLED pixel driving circuit accordingto claim 1, wherein both materials of the first metal layer and thesecond metal layer are molybdenum, aluminum or copper.
 5. Themanufacture method of the AMOLED pixel driving circuit according toclaim 1, wherein the P type ion doped in the step 3 is boron ion.
 6. Themanufacture method of the AMOLED pixel driving circuit according toclaim 1, wherein material of the oxide semiconductor in the step 7 isIGZO or ITZO.
 7. The manufacture method of the AMOLED pixel drivingcircuit according to claim 1, further comprising: step 10, sequentiallyforming a flat layer, a pixel electrode, a pixel definition layer and apixel separation layer from top to bottom on the drive thin filmtransistor source, the drive thin film transistor drain, the switch thinfilm transistor source, the switch thin film transistor drain and theinterlayer insulation layer.
 8. The manufacture method of the AMOLEDpixel driving circuit according to claim 7, wherein a third viapenetrating the flat layer is formed in a position on the flat layercorresponding to the drive thin film transistor drain; the pixelelectrode contacts with the drive thin film transistor drain through thethird via.
 9. The manufacture method of the AMOLED pixel driving circuitaccording to claim 7, wherein the pixel definition layer is formed withan opening at a position corresponding to the pixel electrode.
 10. Themanufacture method of the AMOLED pixel driving circuit according toclaim 7, wherein material of the pixel electrode is ITO.
 11. Amanufacture method of an AMOLED pixel driving circuit, comprising stepsof: step 1, providing a substrate, and performing clean and pre-cure tothe substrate; step 2, depositing a buffer layer on the substrate, anddepositing an amorphous silicon layer on the buffer layer; step 3,performing P type ion doping and rapid thermal annealing to theamorphous silicon layer to crystallize the same into a polysiliconlayer, and patterning the polysilicon layer to form a drive thin filmtransistor active layer and a storage capacitor lower electrode; step 4,depositing a gate insulation layer on the drive thin film transistoractive layer, the storage capacitor lower electrode and the bufferlayer; step 5, depositing a first metal layer on the gate insulationlayer, and patterning the first metal layer to form a drive thin filmtransistor gate above the drive thin film transistor active layer and aswitch thin film transistor gate, which is separately aligned with thedrive thin film transistor gate, and a storage capacitor upper electrodelocated above the storage capacitor lower electrode; step 6, depositingan interlayer insulation layer on the drive thin film transistor gate,the switch thin film transistor gate, the storage capacitor upperelectrode and the gate insulation layer; step 7, depositing an oxidesemiconductor layer on the interlayer insulation layer, and patterningthe oxide semiconductor layer to form a switch thin film transistoractive layer above the switch thin film transistor gate; step 8,patterning the interlayer insulation layer and the gate insulation layerto form a first via and a second via penetrating the interlayerinsulation layer and the gate insulation layer to respectively exposetwo ends of the drive thin film transistor active layer with the firstvia and the second via; step 9, depositing a second metal layer on theinterlayer insulation layer and the switch thin film transistor activelayer, and patterning the second metal layer to form a drive thin filmtransistor source, a drive thin film transistor drain, a switch thinfilm transistor source and a switch thin film transistor drain; whereinthe drive thin film transistor source and the drive thin film transistordrain respectively contact with two ends of the drive thin filmtransistor active layer through the first via and the second via; theswitch thin film transistor source and the switch thin film transistordrain respectively contact with two ends of the switch thin filmtransistor active layer; the switch thin film transistor gate and thedrive thin film transistor source are electrically coupled; wherein thesubstrate in the step 1 is a glass substrate; wherein all materials ofthe buffer layer, the gate insulation layer and the interlayerinsulation layer are one or more combinations of silicon oxide andsilicon nitride; wherein both materials of the first metal layer and thesecond metal layer are molybdenum, aluminum or copper.
 12. Themanufacture method of the AMOLED pixel driving circuit according toclaim 11, wherein the P type ion doped in the step 3 is boron ion. 13.The manufacture method of the AMOLED pixel driving circuit according toclaim 11, wherein material of the oxide semiconductor in the step 7 isIGZO or ITZO.
 14. The manufacture method of the AMOLED pixel drivingcircuit according to claim 11, further comprising: step 10, sequentiallyforming a flat layer, a pixel electrode, a pixel definition layer and apixel separation layer from top to bottom on the drive thin filmtransistor source, the drive thin film transistor drain, the switch thinfilm transistor source, the switch thin film transistor drain and theinterlayer insulation layer.
 15. The manufacture method of the AMOLEDpixel driving circuit according to claim 14, wherein a third viapenetrating the flat layer is formed in a position on the flat layercorresponding to the drive thin film transistor drain; the pixelelectrode contacts with the drive thin film transistor drain through thethird via.
 16. The manufacture method of the AMOLED pixel drivingcircuit according to claim 14, wherein the pixel definition layer isformed with an opening at a position corresponding to the pixelelectrode.
 17. The manufacture method of the AMOLED pixel drivingcircuit according to claim 14, wherein material of the pixel electrodeis ITO.